Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC848W/DG/B2115

BC848W/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

1416000

PMBT4403YS115

PMBT4403YS115

NXP Semiconductors

40 V, 600 MA, DOUBLE NPN SWITCHI

0

PDTB113ZU135

PDTB113ZU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

PBSS3515E,135

PBSS3515E,135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

9997

BC847T,115

BC847T,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BFU910F115

BFU910F115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC856W/ZL115

BC856W/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

456000

BC860BW,115

BC860BW,115

NXP Semiconductors

NOW NEXPERIA BC860BW - SMALL SIG

108370

2PA1774SMB,315

2PA1774SMB,315

NXP Semiconductors

NOW NEXPERIA 2PA1774SMB - SMALL

127998

BC817-40/DG/B2215

BC817-40/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

108000

NMBT3904235

NMBT3904235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

1232000

BC817-25/6215

BC817-25/6215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

2PB709ASL/PA215

2PB709ASL/PA215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

402000

PVR100AD-B2V5,115

PVR100AD-B2V5,115

NXP Semiconductors

NOW NEXPERIA PVR100AD-B2V5 - FIX

6000

BCP56H115

BCP56H115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

45000

PDTA123TM315

PDTA123TM315

NXP Semiconductors

PNP RESISTOR-EQUIPPED TRANSISTOR

10000

PDTD113EU135

PDTD113EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC53-16PAS115

BC53-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTD143XU115

PDTD143XU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

125900

BC54PAS115

BC54PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

96000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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