Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4140V,115

PBSS4140V,115

NXP Semiconductors

PBSS4140V - 1A, 40V, NPN, SOT6

35960

BC846BW/DG/B2115

BC846BW/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

363000

BCX53-10/L135

BCX53-10/L135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

3300

BLA6G1011LS-200RG11

BLA6G1011LS-200RG11

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT502 (

1

2PB710AS,115

2PB710AS,115

NXP Semiconductors

TRANS PNP 50V 500MA SMT3

9000

2PA1774R,115

2PA1774R,115

NXP Semiconductors

TRANS PNP 50V 150MA SC75

978371

PDTD113EU115

PDTD113EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

39000

2PC4617R,135

2PC4617R,135

NXP Semiconductors

TRANS NPN 50V 150MA SC75

0

PDTD143EU135

PDTD143EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

PBSS5240X115

PBSS5240X115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

82555

PDTC114ET/YA215

PDTC114ET/YA215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

3132500

BUJ103AX,127

BUJ103AX,127

NXP Semiconductors

NOW WEEN - BUJ103AX - POWER BIPO

10483

PUMH13/ZL115

PUMH13/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

15000

PMBTA06/6215

PMBTA06/6215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

3264000

PHPT60415NY115

PHPT60415NY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR NPN

51000

BC56-16PAS115

BC56-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

2PC4617R,115

2PC4617R,115

NXP Semiconductors

TRANS NPN 50V 150MA SC75

523599

BC54-10PASX

BC54-10PASX

NXP Semiconductors

NOW NEXPERIA BC54-10PASX - SMALL

146990

PBSS5250X146

PBSS5250X146

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PMST6429,115

PMST6429,115

NXP Semiconductors

NOW NEXPERIA PMST6429 - SMALL SI

941930

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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