Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PB709ARW,115

2PB709ARW,115

NXP Semiconductors

NOW NEXPERIA 2PB709ARW - SMALL S

18055

PMBS3906,235

PMBS3906,235

NXP Semiconductors

NOW NEXPERIA PMBS3906 - SMALL SI

38413

PDTA144EU/ZL115

PDTA144EU/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

PMBT3904VS/S711115

PMBT3904VS/S711115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

6700

2PC4617Q,115

2PC4617Q,115

NXP Semiconductors

TRANS NPN 50V 150MA SC75

199000

BC847AT,115

BC847AT,115

NXP Semiconductors

BC847AT

78392

PUMB2/DG/B3115

PUMB2/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

84000

PUMB9/ZL115

PUMB9/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

BC55-16PAS115

BC55-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

2PC4617QMB,315

2PC4617QMB,315

NXP Semiconductors

NOW NEXPERIA 2PC4617QMB - SMALL

96800

BLF644P112

BLF644P112

NXP Semiconductors

BROADBAND POWER LDMOS TRANSISTOR

1421

BCX53-16/DG/B3115

BCX53-16/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

52000

PDTC114EE/DG115

PDTC114EE/DG115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

45000

BC807-40/S500215

BC807-40/S500215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC807-40W/ZL135

BC807-40W/ZL135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

BC846DS

BC846DS

NXP Semiconductors

NOW NEXPERIA BC846DS - SMALL SIG

0

PDTD1113ET215

PDTD1113ET215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC51-10PASX

BC51-10PASX

NXP Semiconductors

NOW NEXPERIA BC51-10PASX - SMALL

84000

PVR100AZ-B3V3,115

PVR100AZ-B3V3,115

NXP Semiconductors

TRANS NPN 45V 100MA SOT223

5809

BSR16/DG/B4215

BSR16/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

51000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top