Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BFU530W,115

BFU530W,115

NXP Semiconductors

NPN WIDEBAND SILICON RF TRANSIST

3000

PBHV9560Z115

PBHV9560Z115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC51-16PAS115

BC51-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC817-25/DG/B2235

BC817-25/DG/B2235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC847CW/ZL115

BC847CW/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

180000

PHPT60606PY115

PHPT60606PY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, PNP

1500

BC857BQAZ

BC857BQAZ

NXP Semiconductors

BC857XQA SERIES - 45 V, 100 MA P

157570

PEMZ7315

PEMZ7315

NXP Semiconductors

NPN/PNP TRANSISTOR TRANSISTOR

5550

BC856BMB315

BC856BMB315

NXP Semiconductors

BC856B

60000

BC847C/DG/B2215

BC847C/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

63000

PDTA114EE/DG115

PDTA114EE/DG115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

2454000

PBSS4260PAN

PBSS4260PAN

NXP Semiconductors

NOW NEXPERIA PBSS4260PAN - SMALL

0

PHPT61003PY115

PHPT61003PY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, PNP

57000

PDTD143EU115

PDTD143EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

103346

BCP69-16/DG,115

BCP69-16/DG,115

NXP Semiconductors

TRANS SMALL SIGNAL BIPOLR SOT223

320000

2PB1219AQ,115

2PB1219AQ,115

NXP Semiconductors

NOW NEXPERIA 2PB1219AQ - SMALL S

113190

PDTD114EU135

PDTD114EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

40000

PHPT61002PYC115

PHPT61002PYC115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, PNP

0

BFR505T115

BFR505T115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC856B/DG/B2235

BC856B/DG/B2235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

70000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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