Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP69-16/S500115

BCP69-16/S500115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

7000

BC847A,235

BC847A,235

NXP Semiconductors

NOW NEXPERIA BC847A - SMALL SIGN

280000

PHPT61002NYC115

PHPT61002NYC115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, LFPAK

427000

PDTB123EU115

PDTB123EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

145960

PBSS5112PAP

PBSS5112PAP

NXP Semiconductors

NOW NEXPERIA PBSS5112PAP - SMALL

0

BC817-25/DG/B4215

BC817-25/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

12000

BCP56-16H,115

BCP56-16H,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC52-10PASX

BC52-10PASX

NXP Semiconductors

BC52PAS - 60V, 1 A PNP MEDIUM PO

24000

PDTB114EU115

PDTB114EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

88460

BFU550A235

BFU550A235

NXP Semiconductors

NPN WIDEBAND SILICON RF TRANSIST

10000

PVR100AZ-B12V,115

PVR100AZ-B12V,115

NXP Semiconductors

TRANS NPN 45V 100MA SOT223

3951

2PB709ASW,115

2PB709ASW,115

NXP Semiconductors

NOW NEXPERIA 2PB709ASW - SMALL S

323217

BC857B/DG/B3215

BC857B/DG/B3215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

69000

BFU530215

BFU530215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

PUMB2/L135

PUMB2/L135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

340000

PBSS4230QAZ

PBSS4230QAZ

NXP Semiconductors

PBSS4230QA - 30V, 2A NPN LOW VCE

100000

BC817-16W,135

BC817-16W,135

NXP Semiconductors

NOW NEXPERIA BC817-16W - SMALL S

40000

PDTB113ZU115

PDTB113ZU115

NXP Semiconductors

0.5A, 50V, PNP, SOT323

5980

PBSS2515M3145

PBSS2515M3145

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBSS4021NT/WD215

PBSS4021NT/WD215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

576000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top