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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCW66HTC

BCW66HTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.8A SOT23-3

0
ZTX601STOA

ZTX601STOA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

0
ZTX788BSTOA

ZTX788BSTOA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 3A E-LINE

0
MMST3906-7

MMST3906-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A SC70-3

0
FMMTA13TC

FMMTA13TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 40V 0.3A SOT23-3

0
ZUMT618TC

ZUMT618TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1.25A SC70-3

0
ZTX1056ASTOB

ZTX1056ASTOB

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 3A E-LINE

0
FZT851TC

FZT851TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT223

0
FCX2016TC

FCX2016TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V SOT89

0
FMMT497TC

FMMT497TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A SOT23-3

0
ZTX601ASTZ

ZTX601ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

0
ZTX605STOA

ZTX605STOA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A E-LINE

0
ZTX1047ASTOB

ZTX1047ASTOB

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 10V 4A E-LINE

0
ZTX755STOB

ZTX755STOB

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 1A E-LINE

0
BCX19TA

BCX19TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.5A SOT23-3

0
FMMT720TC

FMMT720TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1.5A SOT23-3

0
FZT491TC

FZT491TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT223

0
ZTX415STOB

ZTX415STOB

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 0.5A E-LINE

0
FZT1147ATC

FZT1147ATC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 5A SOT223

0
FZT493TC

FZT493TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT223

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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