Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP717MATA

ZXTP717MATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4A 3-DFN

334730000

FCX789ATA

FCX789ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A SOT89

324

BC848C-7-F

BC848C-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 0.1A SOT23-3

65445

ZXTP25012EZTA

ZXTP25012EZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4.5A SOT89

1667

BCP5116TA

BCP5116TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT223

775

FMMT597TA

FMMT597TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.2A SOT23-3

49237

FZT955TA

FZT955TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A SOT-223

576179000

MMST4126-7-F

MMST4126-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 0.2A SC70-3

3368

MMBT4126-7-F

MMBT4126-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 0.2A SMD SOT23-3

83324000

DXTN07100BP5Q-13

DXTN07100BP5Q-13

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR PDI5 T&R

5000

DNLS320A-7

DNLS320A-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2A SOT23-3

3499

FZT1047ATA

FZT1047ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 10V 5A SOT-223

421897000

ZXTP5401ZTA

ZXTP5401ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.6A SOT89

1840

ZTX757

ZTX757

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A E-LINE

19128000

BCX54TA

BCX54TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT89

235

MMST2907AQ-7

MMST2907AQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT32

33000

FMMT494TC

FMMT494TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 120V 1A SOT23-3

210000

APT13005STF-G1

APT13005STF-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 3.2A TO220

0

FMMTL619TA

FMMTL619TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 1.25A SOT23-3

467

ZTX601B

ZTX601B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

691452000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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