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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZTX657

ZTX657

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A E-LINE

2069
FCX555TA

FCX555TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 180V 0.7A SOT-89

1631973000
ZXTN25060BZQTA

ZXTN25060BZQTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A SOT89

0
ZTX549STZ

ZTX549STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 1A E-LINE

6000
DXT3150-13

DXT3150-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5A SOT89-3

21082500
DP0150BLP4-7B

DP0150BLP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.1A DFN1006H4-3

3252
FMMTL717TA

FMMTL717TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 1.25A SOT23-3

104127000
ZTX692BSTZ

ZTX692BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 1A E-LINE

58000
BC856B-7-F

BC856B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 65V 0.1A SOT23-3

2723
DZT751-13

DZT751-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3A SOT-223

188517500
MMBT3904LP-7

MMBT3904LP-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A DFN1006-3

4140
ZXTN25020CFHTA

ZXTN25020CFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A SOT23-3

39
BC807-40W-7

BC807-40W-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SC70-3

0
ZXTP07012EFFTA

ZXTP07012EFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4A SOT23F-3

3298
ZX5T3ZTA

ZX5T3ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 5.5A SOT-89

425119000
DSS5160T-7

DSS5160T-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23

565
ZTX550

ZTX550

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A E-LINE

8394
ZTX968STZ

ZTX968STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4.5A E-LINE

42000
DXTN07060BFG-7

DXTN07060BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1671
2DC4617QLP-7B

2DC4617QLP-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A DFN1006-3

5213

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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