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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP25100CFHTA

ZXTP25100CFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT23-3

250
MMST4124-7-F

MMST4124-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 0.2A SC70-3

2147483647
ZXTN2005GTA

ZXTN2005GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 7A SOT223

226419000
ZXT10P20DE6QTA

ZXT10P20DE6QTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT26

0
BCX5310TA

BCX5310TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT89

6480
DSS5160TQ-7

DSS5160TQ-7

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR SOT23 T&R

93000
ZXTN619MATA

ZXTN619MATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 4A 3-DFN

543
FCX493TA

FCX493TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT-89

48807
2DD2652-7

2DD2652-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 1.5A SOT-323

5604
BC857BTQ-7

BC857BTQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT52

0
FZT849TA

FZT849TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 7A SOT-223

24710
DXTA92-13

DXTA92-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A SOT89-3

231
FZT651TC

FZT651TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 3A SOT223

0
MMSTA92-7-F

MMSTA92-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.1A SC70-3

2337
DXT696BK-13

DXT696BK-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 180V 0.5A TO252

27872500
FZT855TA

FZT855TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 5A SOT-223

10422
ZXT790AKTC

ZXT790AKTC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A D-PAK

12566
ZTX790ASTZ

ZTX790ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A E-LINE

0
DSS60600MZ4-13

DSS60600MZ4-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 6A SOT-223

344
ZTX415STZ

ZTX415STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 0.5A E-LINE

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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