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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP03200BZTA

ZXTP03200BZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 2A SOT89

81000
BC857BWQ-13-F

BC857BWQ-13-F

Zetex Semiconductors (Diodes Inc.)

TRANSISTOR SOT323

0
FZT491AQTA

FZT491AQTA

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT223 T

0
FZT603QTA

FZT603QTA

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT223

0
DSS60601MZ4Q-13

DSS60601MZ4Q-13

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT223

5000
BC53-16PA-7

BC53-16PA-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A UDFN

0
BC847BFAQ-7B

BC847BFAQ-7B

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR X2-DF

220000
ZXTN2010ZQTA

ZXTN2010ZQTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT89 T&R

0
BCP5610QTA

BCP5610QTA

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT223

13000
ZXT951KQTC

ZXT951KQTC

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR TO252

0
DXT651Q-13

DXT651Q-13

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT89

0
DXTN3C60PS-13

DXTN3C60PS-13

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR POWERDI506

0
DSS5220TQ-13

DSS5220TQ-13

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR SOT23

0
DXT5551P5Q-13

DXT5551P5Q-13

Zetex Semiconductors (Diodes Inc.)

PWR HI VOLTAGE TRANSISTOR PDI5

10000
DXTP58100CFDB-7

DXTP58100CFDB-7

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR U-DFN2020

2992
MJD32CUQ-13

MJD32CUQ-13

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR TO252

1300000
APT13005DTF-G1

APT13005DTF-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 4A

0
ZXTP2012ZQTA

ZXTP2012ZQTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 4.3A SOT89

0
FMMT411TA

FMMT411TA

Zetex Semiconductors (Diodes Inc.)

AVALANCHE TRANSISTOR,SOT23,T&R,3

3000
DXTN10060DFJBQ-7

DXTN10060DFJBQ-7

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR U-DFN2020-

33000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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