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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFR92PE6530

BFR92PE6530

IR (Infineon Technologies)

RF LOW-NOISE SI TRANSISTOR

7496
NE202930-T1-A

NE202930-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 11GHZ SOT323

0
BFR92WH6327XTSA1

BFR92WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 15V 5GHZ SOT323-3

0
BFG540/X,215

BFG540/X,215

NXP Semiconductors

RF TRANS NPN 15V 9GHZ SOT143B

0
AT-31011-TR2G

AT-31011-TR2G

Broadcom

RF TRANS NPN 5.5V SOT143

0
BFS520,135

BFS520,135

NXP Semiconductors

RF TRANS NPN 15V 9GHZ SOT323-3

0
2SC5012-A

2SC5012-A

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 9GHZ SOT343

0
BF959RL1

BF959RL1

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 20V 700MHZ TO92-3

0
MRF553

MRF553

Microsemi

RF TRANS NPN 16V 175MHZ

0
BFS17WH6393XTSA1

BFS17WH6393XTSA1

IR (Infineon Technologies)

RF TRANS NPN SOT323-3

0
NE94430-T1-A

NE94430-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 15V 2GHZ SOT323

0
AT-42086-BLKG

AT-42086-BLKG

Broadcom

RF TRANS NPN 12V 8GHZ 86 PLASTIC

0
BFS17A,215

BFS17A,215

NXP Semiconductors

RF TRANS NPN 15V 2.8GHZ TO236AB

0
MRF4427GR1

MRF4427GR1

Microsemi

RF TRANS NPN 20V 8SO

0
BFT93,215

BFT93,215

NXP Semiconductors

RF TRANS PNP 12V 5GHZ TO236AB

0
UPA806T-A

UPA806T-A

CEL (California Eastern Laboratories)

RF TRANS 2 NPN 6V 12GHZ SOT363

0
BFR 183T E6327

BFR 183T E6327

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SC75

0
BFP 420F E6327

BFP 420F E6327

IR (Infineon Technologies)

RF TRANS NPN 5V 25GHZ 4TSFP

0
BFS17,235

BFS17,235

NXP Semiconductors

RF TRANS NPN 15V 1GHZ TO236AB

0
2SC3356-A

2SC3356-A

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 7GHZ SOT23

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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