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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BLF6G10LS-160RN112

BLF6G10LS-160RN112

NXP Semiconductors

RF POWER TRANSISTORS

20
NSVF5488SKT3G

NSVF5488SKT3G

Sanyo Semiconductor/ON Semiconductor

BIP NPN 70MA 10V FT=7G

64000
40033

40033

Microsemi

RF POWER TRANSISTOR

0
MRF6V3090NBR5578

MRF6V3090NBR5578

NXP Semiconductors

RF POWER UHF BAND N-CHANNEL FET

0
BFP 405 H6740

BFP 405 H6740

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

3000
NESG2101M05-T1-A

NESG2101M05-T1-A

Renesas Electronics America

NESG2101 - NPN SIGE RF TRANSISTO

9000
BFP520FH6327

BFP520FH6327

IR (Infineon Technologies)

LOW-NOISE SI TRANSISTOR

60000
BFR 360L3E6765

BFR 360L3E6765

IR (Infineon Technologies)

LOW-NOISE TRANSISTOR

15000
BF-517

BF-517

IR (Infineon Technologies)

RF TRANSISTOR, NPN

9000
BFP 183 E7764

BFP 183 E7764

RF BIPOLAR TRANSISTOR

3000
BFP720FE6327

BFP720FE6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

1500
BFS-17-SE

BFS-17-SE

IR (Infineon Technologies)

LOW-NOISE SI TRANSISTOR

0
BFP740FESDH6327

BFP740FESDH6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

142641
UPA901TU-T3-A

UPA901TU-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

30000
BFP196WH6327

BFP196WH6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

0
1N2623B

1N2623B

RECTIFIER DIODE

0
BFP720FH6327

BFP720FH6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

219000
BLF6G20LS-180RN112

BLF6G20LS-180RN112

NXP Semiconductors

RF POWER TRANSISTORS

10
NSVF5501SKT3G

NSVF5501SKT3G

Sanyo Semiconductor/ON Semiconductor

RF-TR 10V 70MA FT=5.5GHZ

804532000
BFP169WH6740

BFP169WH6740

IR (Infineon Technologies)

SI- AND SIGE:C-TRANSISTOR

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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