Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - RF

Image	Part Number	Description / PDF	Quantity	Rfq
	AT-42085G Broadcom	RF TRANS NPN 12V 8GHZ 85 PLASTIC	0
	BFG 196 E6327 IR (Infineon Technologies)	RF TRANS NPN 12V 7.5GHZ SOT223-4	0
	BF494_D27Z Sanyo Semiconductor/ON Semiconductor	RF TRANS NPN 20V TO92-3	0
	NE85639-T1-A CEL (California Eastern Laboratories)	RF TRANS NPN 12V 9GHZ SOT143	0
	BLS3135-50,114 NXP Semiconductors	RF TRANS NPN 75V 3.5GHZ CDFM2	0
	BFR 360T E6327 IR (Infineon Technologies)	RF TRANS NPN 9V 14GHZ SC75	0
	MPSH17_D27Z Sanyo Semiconductor/ON Semiconductor	RF TRANS NPN 15V 800MHZ TO92-3	0
	BFS17SH6327XTSA1 IR (Infineon Technologies)	RF TRANS 2NPN 15V 1.4GHZ SOT363	0
	AT-32032-TR1G Broadcom	RF TRANS NPN 5.5V SC70-3	0
	60159 Microsemi	RF POWER TRANSISTOR	0
	BFS17TA Zetex Semiconductors (Diodes Inc.)	RF TRANS NPN 15V 1.3GHZ SOT23-3	0
	PN918 Sanyo Semiconductor/ON Semiconductor	RF TRANS NPN 15V 600MHZ TO92-3	0
	JANTX2N2857 Microsemi	RF TRANS NPN 15V 500MHZ TO72	0
	MPSH10_D26Z Sanyo Semiconductor/ON Semiconductor	RF TRANS NPN 25V 650MHZ TO92-3	0
	MRF555T Microsemi	RF TRANS NPN 16V POWER MACRO	0
	NE68018-A CEL (California Eastern Laboratories)	RF TRANS NPN 10V 10GHZ SOT343	0
	MRF8372 Microsemi	RF TRANS NPN 16V 870MHZ 8SO	0
	BFP182WE6327HTSA1 IR (Infineon Technologies)	RF TRANS NPN 12V 8GHZ SOT343-4	0
	2N4957UB Microsemi	RF TRANS PNP 30V 30MA UB	0
	SD1446 STMicroelectronics	RF TRANS NPN 18V M113	0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (f_T), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

Type	Functional Features	Application Examples
NPN RF BJT	High electron mobility, optimized for low-noise amplification	5G base station LNAs, GPS receivers
PNP RF BJT	Complementary design for power amplification	RF power modules, automotive radar
RF Darlington Pair	High (current gain), cascaded amplification	Antenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)	Compound semiconductor materials (SiGe/GaAs), ultra-high f_T	Optical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

Parameter	Description	Typical Range
f_T (Transition Frequency)	Current gain cutoff frequency	1 GHz - 100 GHz
G_UM (Max. Available Gain)	Power gain at optimal impedance	10 dB - 30 dB
P_out (Output Power)	RMS power capability	0.1 W - 500 W
NF (Noise Figure)	Signal-to-noise degradation	0.3 dB - 5 dB
V_CE0 (Breakdown Voltage)	Collector-emitter withstand voltage	5 V - 80 V
(Junction Temperature)	Thermal stability limit	150 C - 200 C

5. Application Fields

Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
Defense: Phased array radar systems, electronic warfare jammers
Test & Measurement: RF signal generators, spectrum analyzers
Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

Manufacturer	Representative Product	Key Specifications
Infineon Technologies	BFP740F	f_T=50 GHz, NF=0.8 dB, P_out=18 dBm
STMicroelectronics	STAG2141	2.7 GHz dual-stage amplifier, 32 dB gain
Skyworks Solutions	ASK24011	0.05-6 GHz, 50 W GaAs power transistor
ON Semiconductor	MRF151G	125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

Match f_T to application frequency with 20% margin
Verify load-line requirements for power applications
Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
Derate V_CE0 by 30% in high-temperature environments
Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

Transition to SiGe BiCMOS technology for 100+ GHz applications
Integration with GaN-on-SiC substrates for hybrid power amplifiers
Development of 5G NR direct-conversion transmitters using HBT arrays
Advancements in wafer-level packaging (WLP) for mmWave 5G devices
Adoption of AI-driven parameter optimization in production testing