Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMC964040R

DMC964040R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

10723

XN0421L00L

XN0421L00L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2766

DMG564H20R

DMG564H20R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

6000

DMG964030R

DMG964030R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7900

DMA261040R

DMA261040R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

2325

DMA561050R

DMA561050R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

2975

XP0111M00L

XP0111M00L

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

2975

DMC261020R

DMC261020R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

21

UP03397G0L

UP03397G0L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

11708

DMC5610E0R

DMC5610E0R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

5581

DMA261010R

DMA261010R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

5603

DMC566030R

DMC566030R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

5879

DMG5640N0R

DMG5640N0R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

5857

XP0611100L

XP0611100L

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2978

DMA261050R

DMA261050R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

14708

XP0111H00L

XP0111H00L

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

0

XP0121E00L

XP0121E00L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

XN0121300L

XN0121300L

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

0

UP0121MG0L

UP0121MG0L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

0

DMA561030R

DMA561030R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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