Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
XN0F25600L

XN0F25600L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2743

DMA564030R

DMA564030R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

6000

DMA564010R

DMA564010R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

1123

DMA264040R

DMA264040R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

1209

DMC264010R

DMC264010R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

232

DMA964020R

DMA964020R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

11974

DMC961020R

DMC961020R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

8000

DMA964070R

DMA964070R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

7767

DMC564000R

DMC564000R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

5750

DMA566040R

DMA566040R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

1450

UP0421400L

UP0421400L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

463

DMG964050R

DMG964050R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7975

DMA564020R

DMA564020R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2776

DMC264030R

DMC264030R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

0

DMA9640T0R

DMA9640T0R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

8000

XP0121000L

XP0121000L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

1706

DMC964060R

DMC964060R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

21690

DMC266010R

DMC266010R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

1290

DMA566060R

DMA566060R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

3000

DMG264010R

DMG264010R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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