Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMG9640M0R

DMG9640M0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7575

DMG264020R

DMG264020R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

0

UP0431100L

UP0431100L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

163

DMC561060R

DMC561060R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

DMC964010R

DMC964010R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

11738

DMG963HD0R

DMG963HD0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

4215

XN0111000L

XN0111000L

Panasonic

TRANS PREBIAS DUAL PNP MINI5

561

XN0438100L

XN0438100L

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

994

XN0621500L

XN0621500L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

0

DMG264060R

DMG264060R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

1097

DMG964010R

DMG964010R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

4030

DMC9640N0R

DMC9640N0R

Panasonic

TRANS 2NPN PREBIAS 0.125W SMINI6

4938

UP0121M00L

UP0121M00L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

9696

XP0621100L

XP0621100L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

2902

UP04112G0L

UP04112G0L

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

15975

DMA564040R

DMA564040R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

5648

DMG563H50R

DMG563H50R

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

6000

DMC264020R

DMC264020R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

451

DMC964070R

DMC964070R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

7912

DMA2610M0R

DMA2610M0R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

2871

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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