Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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NSBA113EDXV6T1G

NSBA113EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT563

0

SMUN5235DW1T3G

SMUN5235DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

0

MUN5231DW1T1G

MUN5231DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

NSVMUN5113DW1T3G

NSVMUN5113DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V DUAL BIPO SC88-3

0

NSBA114TDXV6T5G

NSBA114TDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

NSBC144EPDXV6T5G

NSBC144EPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

0

NSVMUN5336DW1T1G

NSVMUN5336DW1T1G

Sanyo Semiconductor/ON Semiconductor

COMPLEMENTARY DIGITAL TRA

105000

NSVMUN5332DW1T3G

NSVMUN5332DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SC88

0

NSBC114TDXV6T1G

NSBC114TDXV6T1G

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TRANS PREBIAS 2NPN 50V SOT563

3200

NSBC114YPDXV6T1G

NSBC114YPDXV6T1G

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TRANS PREBIAS NPN/PNP 50V SOT563

2735

MUN5232DW1T1G

MUN5232DW1T1G

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TRANS 2NPN PREBIAS 0.25W SOT363

680

MUN5116DW1T1G

MUN5116DW1T1G

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TRANS PREBIAS 2PNP 50V SC88

735075000

SMUN5213DW1T1G

SMUN5213DW1T1G

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TRANS PREBIAS 2NPN 50V SC88

2147483647

NSBC144WDXV6T1G

NSBC144WDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

NSVMUN5212DW1T1G

NSVMUN5212DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

26698

SMUN5232DW1T1G

SMUN5232DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

0

MUN5136DW1T1G

MUN5136DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SC88

63000

NSBC143ZPDP6T5G

NSBC143ZPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

0

NSBC114YDP6T5G

NSBC114YDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

1118

NSTB60BDW1T1G

NSTB60BDW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

5668

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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