Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
SMUN5214DW1T1G

SMUN5214DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

6060000

NSBC123JPDXV6T1G

NSBC123JPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

241084000

MUN5335DW1T1G

MUN5335DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

1463

MUN5311DW1T2G

MUN5311DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

14286

MUN5211DW1T1G

MUN5211DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

2147483647

NSVMUN5133DW1T1G

NSVMUN5133DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP BRT BIPO SOT363-6

51000

SMUN5114DW1T1G

SMUN5114DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

2147483647

MUN5213DW1T3G

MUN5213DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

0

NSBC124EPDXV6T5G

NSBC124EPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

0

MUN5213DW1T1G

MUN5213DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

1707145000

SSVMUN5312DW1T2G

SSVMUN5312DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

186000

NSVMUN531335DW1T3G

NSVMUN531335DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SC88

80000

SMUN5311DW1T2G

SMUN5311DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

350

NSBA144EDXV6T1G

NSBA144EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

108000

NSBC114TDXV6T5G

NSBC114TDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

NSBA123TDP6T5G

NSBA123TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT963

0

SMUN5115DW1T1G

SMUN5115DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

1400

MUN5111DW1T1G

MUN5111DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

1638

NSVMUN5135DW1T1G

NSVMUN5135DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 50V SOT363-6

6581

NSBA143TDXV6T5G

NSBA143TDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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