Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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NSBC144EDXV6T5G

NSBC144EDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

104000

NSVBA143ZDXV6T1G

NSVBA143ZDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP BIPO 60V SOT564

44000

NSBC114EDP6T5G

NSBC114EDP6T5G

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TRANS PREBIAS 2NPN 50V SOT963

771472000

NSBC123TDP6T5G

NSBC123TDP6T5G

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TRANS PREBIAS 2NPN 50V SOT963

0

NSBC124EDXV6T5G

NSBC124EDXV6T5G

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TRANS PREBIAS 2NPN 50V SOT563

0

SMUN5312DW1T1G

SMUN5312DW1T1G

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TRANS NPN/PNP PREBIAS SOT363

5215

NSBA124EDXV6T1G

NSBA124EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

NSBC114EPDP6T5G

NSBC114EPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

1181

NSBC143EPDP6T5G

NSBC143EPDP6T5G

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TRANS PREBIAS NPN 254MW SOT963

0

NSB1706DMW5T1G

NSB1706DMW5T1G

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TRANS 2NPN PREBIAS 0.25W SC70

21410

NSVMUN5235DW1T1G

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TRANS PREBIAS 2NPN 50V SC88

0

NSBC143EDP6T5G

NSBC143EDP6T5G

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TRANS 2NPN PREBIAS 0.339W SOT963

0

NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

SS SOT563 RSTR XSTR TR

0

NSVBA114YDXV6T1G

NSVBA114YDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

NSBC114YPDP6T5G

NSBC114YPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

2147483647

NSBC144EDP6T5G

NSBC144EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

128000

NSBC123EPDXV6T1G

NSBC123EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

96000

SMUN5230DW1T1G

SMUN5230DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

3000

SMUN5113DW1T1G

SMUN5113DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

37

NSVMUN5331DW1T1G

NSVMUN5331DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP 50V BIPO SC88

30003000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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