Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
SMUN5315DW1T1G

SMUN5315DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

2147483647

NSBC114TPDXV6T1G

NSBC114TPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

108000

NSBC114EDXV6T1G

NSBC114EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

2726

NSBC114YDXV6T5G

NSBC114YDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

NSBC144WPDP6T5G

NSBC144WPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

136000

MUN5316DW1T1G

MUN5316DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

48759000

MUN5134DW1T1G

MUN5134DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

0

NSVBA114EDXV6T1G

NSVBA114EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563-6

0

NSBA114EDXV6T1G

NSBA114EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

52000

SMUN5131DW1T1G

SMUN5131DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

0

NSVMUN5213DW1T3G

NSVMUN5213DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V DUAL BIPO SC88-6

9660

NSVMUN5334DW1T1G

NSVMUN5334DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

575

SMUN5235DW1T1G

SMUN5235DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

8664

NSVEMD4DXV6T5G

NSVEMD4DXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP DUAL BRT SOT563

104000

NSVMUN5333DW1T3G

NSVMUN5333DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

0

MUN5314DW1T1G

MUN5314DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

23752

NSBA144WDXV6T1G

NSBA144WDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

0

SMUN5311DW1T1G

SMUN5311DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

6000

NSVMUN5211DW1T3G

NSVMUN5211DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

7755

MUN5216DW1T1G

MUN5216DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

77078000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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