Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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NSVBC114EPDXV6T1G

NSVBC114EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

104000

MUN5114DW1T1G

MUN5114DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

1362

MUN5336DW1T1G

MUN5336DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP BJT SC70-6

2036224000

NSBA143ZDXV6T1G

NSBA143ZDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

400052000

NSBA114EDP6T5G

NSBA114EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT963

0

NSVBC124XPDXV6T1G

NSVBC124XPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

44000

NSVMUN5214DW1T3G

NSVMUN5214DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V DUAL BIPO SC88-6

0

NSBC115TPDP6T5G

NSBC115TPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

0

NSBA143ZDP6T5G

NSBA143ZDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT963

0

NSBC115TDP6T5G

NSBC115TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

0

NSBA114YDXV6T1G

NSBA114YDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

148000

NSBC114TDP6T5G

NSBC114TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

0

EMC5DXV5T1G

EMC5DXV5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT553

324996000

EMG2DXV5T5G

EMG2DXV5T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT553

489048000

NSTB1002DXV5T1G

NSTB1002DXV5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP SOT553

0

EMC4DXV5T1G

EMC4DXV5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT553

108000

EMC2DXV5T1G

EMC2DXV5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT553

44000

NSVB114YPDXV6T1G

NSVB114YPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS BRT 50V 100MA SOT563

0

NSBA143ZDXV6T5G

NSBA143ZDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

0

MUN5316DW1T1

MUN5316DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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