Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
MUN5332DW1T1

MUN5332DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

0

UMA4NT1G

UMA4NT1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.15W SC70

0

NSBC123EDXV6T1G

NSBC123EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

0

NSVB144EPDXV6T1G

NSVB144EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

NSVB124XPDXV6T1G

NSVB124XPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

MUN5230DW1T1

MUN5230DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

MUN5333DW1T1

MUN5333DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

0

NSBC143TPDXV6T5G

NSBC143TPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

MUN5137DW1T1G

MUN5137DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SC88

39000

NSBC124XPDXV6T1G

NSBC124XPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

108000

NSBC124XPDXV6T5G

NSBC124XPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

IMH20TR1

IMH20TR1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.3W SC74R

0

MUN5136DW1T1

MUN5136DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT363

0

MUN5234DW1T1

MUN5234DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

NSB1706DMW5T1

NSB1706DMW5T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SC70

0

MUN5233DW1T1

MUN5233DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

UMA6NT1

UMA6NT1

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.15W SC70

0

MUN5232DW1T1

MUN5232DW1T1

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

NSBC123JPDXV6T1

NSBC123JPDXV6T1

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

NSBC113EPDXV6T1

NSBC113EPDXV6T1

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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