Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
EMB3FHAT2R

EMB3FHAT2R

ROHM Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

7994

UMA8NTR

UMA8NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

0

IMD2AT108

IMD2AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

0

FMC5AT148

FMC5AT148

ROHM Semiconductor

TRANS PREBIAS NPN/PNP 50V SC74A

0

EMB2FHAT2R

EMB2FHAT2R

ROHM Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

7900

EMB10FHAT2R

EMB10FHAT2R

ROHM Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

8000

EMH25T2R

EMH25T2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR(WITH

7990

EMH3FHAT2R

EMH3FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

7283

FMC6AT148

FMC6AT148

ROHM Semiconductor

TRANS PREBIAS NPN/PNP 50V SC74A

0

FMC4AT148

FMC4AT148

ROHM Semiconductor

TRANS PREBIAS NPN/PNP 50V SC74A

0

EMD3FHAT2R

EMD3FHAT2R

ROHM Semiconductor

GENERAL PURPOSE (DUAL DIGITAL TR

6445

FMG9AT248

FMG9AT248

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

0

EMF22T2R

EMF22T2R

ROHM Semiconductor

TRANS NPN PREBIAS/NPN 0.15W EMT6

0

UMF24NTR

UMF24NTR

ROHM Semiconductor

TRANS NPN PREBIAS/NPN 0.15W UMT6

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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