Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMH5NTR

UMH5NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

390

UMF8NTR

UMF8NTR

ROHM Semiconductor

TRANS NPN PREBIAS/NPN 0.15W UMT6

0

IMD1AT108

IMD1AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

0

UMG11NTR

UMG11NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

2880

UMF28NTR

UMF28NTR

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

2437

IMB5AT108

IMB5AT108

ROHM Semiconductor

TRANS PREBIAS 2PNP 50V SC74

0

FMA3AT148

FMA3AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

2987

UMH25NFHATN

UMH25NFHATN

ROHM Semiconductor

AUTOMOTIVE DUAL DIGITAL TRANSIST

3000

EMD22FHAT2R

EMD22FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

7770

UMB8NTR

UMB8NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

0

EMG11T2R

EMG11T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

11082

UMD9NTR

UMD9NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

4552

UMA11NTR

UMA11NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

0

UMG2NTR

UMG2NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

2932

IMD14T108

IMD14T108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

0

FMG5AT148

FMG5AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

0

IMB3AT110

IMB3AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

2985

UMA10NTR

UMA10NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

0

EMH2FHAT2R

EMH2FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

8000

UMC2NTR

UMC2NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

2944

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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