Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMD5NTR

UMD5NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS UMT6

3013

DTA013ZUBTL

DTA013ZUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 0.2W SC85

625

EMG2T2R

EMG2T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

3235

EMD2T2R

EMD2T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

5915

UMH6NTR

UMH6NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

0

EMD6FHAT2R

EMD6FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

5458

UMC5NTR

UMC5NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

4795

UMH2NTN

UMH2NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

3183

EMD22T2R

EMD22T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

0

EMH10FHAT2R

EMH10FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

8852

UMB4NTN

UMB4NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

0

EMB3T2R

EMB3T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

14604

EMF5T2R

EMF5T2R

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W EMT6

8168

UMH4NFHATN

UMH4NFHATN

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

3000

UMD2NFHATR

UMD2NFHATR

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

2650

EMH1T2R

EMH1T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

6867

EMF17T2R

EMF17T2R

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W EMT6

0

FMA9AT148

FMA9AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

576

EMH6T2R

EMH6T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

15023

DTA015EUBTL

DTA015EUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

2975

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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