Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
FMA5AT148

FMA5AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

227

IMH14AT108

IMH14AT108

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

2130

FMG3AT148

FMG3AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

2996

EMH4FHAT2R

EMH4FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

7947

UMG4NTR

UMG4NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

2975

UMA3NTR

UMA3NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

454

FMG9AT148

FMG9AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

2240

IMD9AT108

IMD9AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

1150

IMH4AT110

IMH4AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

0

EMG9T2R

EMG9T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

536

EMA11T2R

EMA11T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

0

IMH21T110

IMH21T110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

2

UMB3NTN

UMB3NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

880

EMG6T2R

EMG6T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

3691

EMB2T2R

EMB2T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

8435

EMD9T2R

EMD9T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

53

EMG4T2R

EMG4T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

0

EMH2T2R

EMH2T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

29372

EMG5T2R

EMG5T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

931

IMB4AT110

IMB4AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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