Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMC3NTR

UMC3NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

0

EMF21T2R

EMF21T2R

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W EMT6

0

UMD25NTR

UMD25NTR

ROHM Semiconductor

UMD25N IS A DIGITAL TRANSISTOR C

11960

EMH10T2R

EMH10T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

4037

UMG7NTR

UMG7NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

0

FMG8AT148

FMG8AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

2316

IMH1AT110

IMH1AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

5655

FMG1AT148

FMG1AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

3000

UMH9NTN

UMH9NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

4642

UMH10NTN

UMH10NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

2549

UMH3NTN

UMH3NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

4621

UMH10NFHATN

UMH10NFHATN

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

1350

IMH11AT110

IMH11AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

1580

DTA014TUBTL

DTA014TUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

2660

UMD6NFHATR

UMD6NFHATR

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

3000

EMA4T2R

EMA4T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

0

UMF23NTR

UMF23NTR

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

0

EMH15T2R

EMH15T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W 6EMT

0

EMB4T2R

EMB4T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

0

UMA4NTR

UMA4NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

9

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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