Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
EMB10T2R

EMB10T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

0

EMH11T2R

EMH11T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

6653

UMD12NTR

UMD12NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

0

EMH25FHAT2R

EMH25FHAT2R

ROHM Semiconductor

TRANS 2NPN 100MA EMT6

4684

EMD12FHAT2R

EMD12FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

874

EMH9FHAT2R

EMH9FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

4505

UMD22NFHATR

UMD22NFHATR

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

0

UMD2NTR

UMD2NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

0

EMH4T2R

EMH4T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

8000

IMH23T110

IMH23T110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

2934

EMH59T2R

EMH59T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

7335

UMA1NTR

UMA1NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

742

UMB9NTN

UMB9NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

1144

EMD5T2R

EMD5T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

6729

UMB10NTN

UMB10NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

501

UMG1NTR

UMG1NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W UMT5

86

IMD10AT108

IMD10AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

3241

EMD29T2R

EMD29T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.12W EMT6

7990

IMH24T110

IMH24T110

ROHM Semiconductor

TRANS PREBIAS 2NPN 20V SC74

0

UMG3NTR

UMG3NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

3000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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