Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMH11NFHATN

UMH11NFHATN

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

0

UP0431300L

UP0431300L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

782

RN4984FE,LF(CT

RN4984FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

670

DCX123JH-7

DCX123JH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

NSBC123JDXV6T1

NSBC123JDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

128000

PEMH13,315

PEMH13,315

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

RN2910,LF(CT

RN2910,LF(CT

Toshiba Electronic Devices and Storage Corporation

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

6000

PUMB11,115

PUMB11,115

Nexperia

TRANS 2PNP PREBIAS 0.3W 6TSSOP

21210

PUMB1,115

PUMB1,115

Nexperia

TRANSISTORS>100MHZ

39550

RN2707,LF

RN2707,LF

Toshiba Electronic Devices and Storage Corporation

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

5975

MUN5235DW1T1G

MUN5235DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

DDA142TH-7

DDA142TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

NHUMB2F

NHUMB2F

Nexperia

NHUMB2/SOT363/SC-88

10000

NHUMD3F

NHUMD3F

Nexperia

NHUMD3/SOT363/SC-88

10000

NHUMD9X

NHUMD9X

Nexperia

NHUMD9/SOT363/SC-88

3000

DMC964050R

DMC964050R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

15919

DMA261020R

DMA261020R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

5975

DDA122TH-7

DDA122TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

XP0421500L

XP0421500L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

2601

PUMD20,115

PUMD20,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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