Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMC3NT1G

UMC3NT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SC88A

3790

EMH9T2R

EMH9T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

9640

BCR35PNH6433XTMA1

BCR35PNH6433XTMA1

IR (Infineon Technologies)

TRANS NPN/PNP PREBIAS SOT363

0

XP0421100L

XP0421100L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

85149

RN1604(TE85L,F)

RN1604(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.3W SM6

2168

PEMH13,115

PEMH13,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

146

DDC144NS-7

DDC144NS-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

33000

NSBC143EPDXV6T1G

NSBC143EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

108000

UMB11NTN

UMB11NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

6

NSVEMC2DXV5T1G

NSVEMC2DXV5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT553

1074104000

DDC142TH-7

DDC142TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

UMH1NTN

UMH1NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

83

DCX114YH-7

DCX114YH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

IMH9AT110

IMH9AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

6183

RN2505TE85LF

RN2505TE85LF

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.3W SMV

2930

UP04215G0L

UP04215G0L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

8000

XP0421200L

XP0421200L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

507

NSVBC124EDXV6T1G

NSVBC124EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

44000

PUMD3,165

PUMD3,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

8246

UP03390G0L

UP03390G0L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

14739

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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