Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
SMUN5233DW1T1G

SMUN5233DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

35330000

ACX143ZUQ-7R

ACX143ZUQ-7R

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 3K

0

NSBC143EDXV6T1G

NSBC143EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

88000

NSBA123EDXV6T1

NSBA123EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

120000

DCX124EH-7

DCX124EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

RN2603(TE85L,F)

RN2603(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.3W SM6

5989

PBLS6022D,115

PBLS6022D,115

Nexperia

NOW NEXPERIA PBLS6022D - SMALL S

223760

PUMD10,135

PUMD10,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

7586

NSBC113EDXV6T1G

NSBC113EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

108000

NSBC143ZDXV6T5G

NSBC143ZDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

40000

NP062AN00A

NP062AN00A

Panasonic

TRANS 2NPN PREBIAS SSSMINI6

19660

MUN5132DW1T1G

MUN5132DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

0

NSBC123JDP6T5G

NSBC123JDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

80000

IMD10AMT1G

IMD10AMT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP PREBIAS SC74R

2147483647

PUMB10,115

PUMB10,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

5078

XN0421300L

XN0421300L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

1273

UMH8NTR

UMH8NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

2280

EMG8T2R

EMG8T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

17703

RN2905FE,LF(CT

RN2905FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ES6

0

RN2710JE(TE85L,F)

RN2710JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ESV

3611

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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