Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
NSBC143ZPDXV6T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS NPN/PNP 50V SOT563	2147483647
RN1708JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4	3900
RN2911,LF Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.2W US6	0
PRMD16Z Nexperia	PRMD16/SOT1268/DFN1412-6	5000
IMD8AT108 ROHM Semiconductor	TRANS NPN/PNP PREBIAS 0.3W SMT6	0
EMH61T2R ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6	3334
MUN5312DW1T2G Sanyo Semiconductor/ON Semiconductor	TRANS NPN/PNP PREBIAS SOT363	375000
RN2502(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SMV	96
NSVBC124EPDXV6T1G Sanyo Semiconductor/ON Semiconductor	SS SOT563 DUAL RSTR XSTR	0
UP0411100L Panasonic	TRANS PREBIAS DUAL PNP SSMINI6	7
NSBA114TDXV6T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 2PNP 50V SOT563	0
EMA3T2R ROHM Semiconductor	TRANS 2PNP PREBIAS 0.15W	0
PUMB16,115 NXP Semiconductors	NOW NEXPERIA PUMB16 - SMALL SIGN	127500
SMUN5330DW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS NPN/PNP PREBIAS SOT363	3000
EMF24T2R ROHM Semiconductor	TRANS NPN PREBIAS/NPN 0.15W EMT6	0
UMB1NTN ROHM Semiconductor	TRANS PREBIAS DUAL PNP UMT6	0
PUMH15,115 Nexperia	TRANS PREBIAS 2NPN 50V 6TSSOP	1631
IMH6AT108 ROHM Semiconductor	TRANS PREBIAS DUAL NPN SMT6	1908
UMA5NTR ROHM Semiconductor	TRANS PREBIAS DUAL PNP UMT5	2129
MUN5215DW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS 2NPN PREBIAS 0.25W SOT363	1

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications