Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
IMB11AT110

IMB11AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

0

IMH8AT108

IMH8AT108

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

25

EMD4DXV6T5G

EMD4DXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

96000

NSBA115EDXV6T1G

NSBA115EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

NSBC124EDXV6T1G

NSBC124EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

258348000

PEMH24,115

PEMH24,115

Nexperia

NOW NEXPERIA PEMH24 - SMALL SIGN

59300

NSBA114TDP6T5G

NSBA114TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT963

2147483647

PUMH9,165

PUMH9,165

Nexperia

TRANS 2NPN PREBIAS 0.3W 6TSSOP

0

PUMD3,135

PUMD3,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

NHUMB13X

NHUMB13X

Nexperia

NHUMB13/SOT363/SC-88

3000

PUMD2,115

PUMD2,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

16727

DDA143TH-7

DDA143TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

FMA1AT148

FMA1AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

2631

MUN5335DW1T2

MUN5335DW1T2

SMALL SIGNAL BIPOLAR TRANSISTOR

5655

UP0338300L

UP0338300L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

1672

UP0421100L

UP0421100L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

1398

PBLS2001D,115

PBLS2001D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

2

DMC562000R

DMC562000R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

198

ADC143TUQ-7

ADC143TUQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 3K

63000

NSVBC124XDXV6T1G

NSVBC124XDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS BRT 2NPN BIPO SOT563

104000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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