Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMD9NFHATR

UMD9NFHATR

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

6167

BCR141SH6327XTSA1

BCR141SH6327XTSA1

IR (Infineon Technologies)

0.1A, 50V, 2

111000

RN1610(TE85L,F)

RN1610(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.3W SM6

1310

DTA014TEBTL

DTA014TEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

0

EMH3T2R

EMH3T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

7631

RN1964FE(TE85L,F)

RN1964FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.1W ES6

3970

NSBC113EDXV6T1

NSBC113EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

36000

DDC122TU-7-F

DDC122TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

0

DDA124EU-7-F

DDA124EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

0

DMC266030R

DMC266030R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2644

NSVTB60BDW1T1G

NSVTB60BDW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP COMBO SC88-6

0

EMH11FHAT2R

EMH11FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

1734

PQMH2Z

PQMH2Z

Nexperia

TRANS NPN/NPN RET 6DFN

395

NSBA143TDXV6T1G

NSBA143TDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

MUN5312DW1T1G

MUN5312DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

374

EMB11T2R

EMB11T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

7980

NSVMUN5332DW1T1G

NSVMUN5332DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP PREBIAS 0.25W SC88

35

DMA566020R

DMA566020R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2881

NSBA144EDXV6T5G

NSBA144EDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP DL 50V SOT563

96000

PEMH4,115

PEMH4,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

39500

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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