Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UP0421500L

UP0421500L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

11774

RN4601(TE85L,F)

RN4601(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.3W SM6

1930

XN0F26100L

XN0F26100L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2944

PUMB17,115

PUMB17,115

Nexperia

TRANS 2PNP PREBIAS 0.3W 6TSSOP

0

DCX115EU-7-F

DCX115EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

4174

NSVMUN5314DW1T3G

NSVMUN5314DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP 50V BIPO SC88-6

2560000

EMH60T2R

EMH60T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

5646

UMF4NTR

UMF4NTR

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

0

EMD12T2R

EMD12T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

7976

DCX122TH-7

DCX122TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

PQMD13Z

PQMD13Z

Nexperia

TRANS NPN/PNP RET 6DFN

3050

PUMD13,135

PUMD13,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

EMB75T2R

EMB75T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

14391

NSBC123JPDP6T5G

NSBC123JPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

0

XN0111600L

XN0111600L

Panasonic

TRANS PREBIAS DUAL PNP MINI5

68

PBLS6023D,115

PBLS6023D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

1958

NHUMH2F

NHUMH2F

Nexperia

NHUMH2/SOT363/SC-88

10000

PBLS4002D,115

PBLS4002D,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

41323

DCX114EU-7-F

DCX114EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS SOT363

179400

NSBA113EDXV6T1G

NSBA113EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT563

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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