Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMA266030R

DMA266030R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

3000

DMA964060R

DMA964060R

Panasonic

TRANS 2PNP PREBIAS 0.125W SMINI6

7975

SMUN5235DW1T3G

SMUN5235DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

0

PUMD48,125

PUMD48,125

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

ADC144EUQ-13

ADC144EUQ-13

Zetex Semiconductors (Diodes Inc.)

IC TRANSISTOR SOT363

982150000

DCX114EK-7-F

DCX114EK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS 0.3W SC74R

0

RN4983FE,LF(CT

RN4983FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

3283

NHUMD10X

NHUMD10X

Nexperia

NHUMD10/SOT363/SC-88

2955

EMD2FHAT2R

EMD2FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

7960

MUN5231DW1T1G

MUN5231DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

0

EMH1FHAT2R

EMH1FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

15619

NSVMUN5113DW1T3G

NSVMUN5113DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V DUAL BIPO SC88-3

0

FMA8AT148

FMA8AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

0

PUMD16,115

PUMD16,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

963

UMA6NTR

UMA6NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

0

NSBA114TDXV6T5G

NSBA114TDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

BCR10PNH6327XTSA1

BCR10PNH6327XTSA1

IR (Infineon Technologies)

TRANS NPN/PNP PREBIAS SOT363

453

XP0121600L

XP0121600L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

236

RN2702,LF

RN2702,LF

Toshiba Electronic Devices and Storage Corporation

TRANSISTOR PNPX2 BRT Q1BSR10KOHM

9000

RN4986(T5L,F,T)

RN4986(T5L,F,T)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

853

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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