Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
MUN5315DW1T1G

MUN5315DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

536487000

NSBC123JDXV6T5G

NSBC123JDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

RN1909FE(TE85L,F)

RN1909FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.1W ES6

3950

NSBA114TDXV6T1

NSBA114TDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

48000

PUMB19,115

PUMB19,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

DIMD10A-7

DIMD10A-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS 0.3W SC74R

357

DMA264030R

DMA264030R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

5955

RN1903FE,LF(CT

RN1903FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

8000

PEMH30,315

PEMH30,315

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

0

SMUN5237DW1T1G

SMUN5237DW1T1G

TRANS 2NPN PREBIAS 0.187W SOT363

5390

MUN5312DW1T1

MUN5312DW1T1

TRANS PREBIAS NPN/PNP SOT363

15000

NSBC143ZDP6T5G

NSBC143ZDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

2147483647

UP0421300L

UP0421300L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

3436

MUN5236DW1T1G

MUN5236DW1T1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

78000

ADC124EUQ-7

ADC124EUQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363

72000

BCR185SH6327XTSA1

BCR185SH6327XTSA1

IR (Infineon Technologies)

TRANS 2PNP PREBIAS 0.25W SOT363

9538

NSBA115TDP6T5G

NSBA115TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

0

ADA114YUQ-13

ADA114YUQ-13

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363

0

UMB2NTN

UMB2NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

2911

UMB11NFHATN

UMB11NFHATN

ROHM Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

3000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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