Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
RN4606(TE85L,F)

RN4606(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.3W SM6

8560

DMC2640F0R

DMC2640F0R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

0

MUN5114DW1T1

MUN5114DW1T1

TRANS 2PNP PREBIAS 0.25W SOT363

105000

UP04113G0L

UP04113G0L

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

4045

PEMB9,315

PEMB9,315

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

NSVMUN5137DW1T1G

NSVMUN5137DW1T1G

SMALL SIGNAL BIPOLAR TRANSISTOR

5689

DMA2610H0R

DMA2610H0R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1454

EMD2T2R

EMD2T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

5915

UMH6NTR

UMH6NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

0

DMG964060R

DMG964060R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

4200

NSBC114TDXV6T5G

NSBC114TDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

NSBA123TDP6T5G

NSBA123TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT963

0

EMD6FHAT2R

EMD6FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

5458

SMUN5115DW1T1G

SMUN5115DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

1400

DMC566050R

DMC566050R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

6000

RN2911FE(TE85L,F)

RN2911FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ES6

3975

PEMD9,315

PEMD9,315

Nexperia

TRANS PREBIAS NPN/PNP SOT666

0

DMA564060R

DMA564060R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

3000

RN4610(TE85L,F)

RN4610(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.3W SM6

2990

NHUMD10F

NHUMD10F

Nexperia

NHUMD10/SOT363/SC-88

10000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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