Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMD3,125

PUMD3,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

NP043A200A

NP043A200A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

19548

DDA143TU-7-F

DDA143TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

340927000

DMA561040R

DMA561040R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

5975

MUN5213DW1T1G

MUN5213DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

1707145000

NHUMD2F

NHUMD2F

Nexperia

NHUMD2/SOT363/SC-88

477

UMD5NTR

UMD5NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS UMT6

3013

SSVMUN5312DW1T2G

SSVMUN5312DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

186000

PUMF11,115

PUMF11,115

Nexperia

PUMF11 - NPN RESISTOR-EQUIPPED T

0

DMA2610F0R

DMA2610F0R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1670

PUMB13,115

PUMB13,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

4865

NSVMUN531335DW1T3G

NSVMUN531335DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SC88

80000

PEMH18,115

PEMH18,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

PUMD6,115

PUMD6,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

58

NHUMB10X

NHUMB10X

Nexperia

NHUMB10/SOT363/SC-88

3000

SMUN2212T1

SMUN2212T1

TRANS PREBIAS NPN 230MW SC59

156000

PBLS4005V,115

PBLS4005V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

20460

DTA013ZUBTL

DTA013ZUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 0.2W SC85

625

DMA564070R

DMA564070R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2975

PEMB2,115

PEMB2,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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