Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PEMD12,315

PEMD12,315

Nexperia

PEMD12 - UPN/PNP DOUBLE RESISTOR

0

MUN5311DW1T2G

MUN5311DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

14286

MUN5211DW1T1G

MUN5211DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

2147483647

NSVMUN5133DW1T1G

NSVMUN5133DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP BRT BIPO SOT363-6

51000

SMUN5114DW1T1G

SMUN5114DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

2147483647

SMUN2233T1

SMUN2233T1

TRANS DIGITAL BJT NPN 50V 100MA

201000

ACX114YUQ-13R

ACX114YUQ-13R

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363

130000

IMB10AT110

IMB10AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

86

NSM11156DW6T1G

NSM11156DW6T1G

SMALL SIGNAL BIPOLAR TRANSISTOR

330000

PEMD3,315

PEMD3,315

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

PUMH9,135

PUMH9,135

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

0

XN0421F00L

XN0421F00L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

4614

MUN5213DW1T3G

MUN5213DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

0

PIMD3F

PIMD3F

Nexperia

PIMD3/SOT457/SC-74

0

NSBC124EPDXV6T5G

NSBC124EPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

0

DDA143EH-7

DDA143EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

DMA964030R

DMA964030R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

7820

RN2962(TE85L,F)

RN2962(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.2W US6

2760

RN4986FE,LF(CT

RN4986FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

0

EMA8T2R

EMA8T2R

ROHM Semiconductor

TRANS PREBIAS DUAL PNP EMT5

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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