Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
PEMD19,115 Nexperia	TRANS PREBIAS NPN/PNP 50V SOT666	0
NHUMH11X Nexperia	NHUMH11/SOT363/SC-88	3000
MUN5133DW1T1	TRANS 2PNP PREBIAS 0.25W SOT363	15000
RN2908,LF(CT Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR22KOHM Q1BER47KOH	5990
DMG963HC0R Panasonic	TRANS PREBIAS NPN/PNP SSMINI5	16000
DMC561040R Panasonic	TRANS 2NPN PREBIAS 0.15W SMINI5	191
RN4607(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.3W SM6	2800
DMC564070R Panasonic	TRANS PREBIAS DUAL NPN SMINI6	0
RN2910FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ES6	0
RN1907FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ES6	3018
EMG2T2R ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT5	3235
DDA114YU-7-F Zetex Semiconductors (Diodes Inc.)	TRANS 2PNP PREBIAS 0.2W SOT363	1776
SMUN5311DW1T2G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 1NPN 1PNP 50V SC88	350
ACX124EUQ-7R Zetex Semiconductors (Diodes Inc.)	PREBIAS TRANSISTOR SOT363	90000
RN1511(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.3W SMV	1788
PUMH4,115 Nexperia	TRANS PREBIAS 2NPN 50V 6TSSOP	16238
DDC144TH-7-F Zetex Semiconductors (Diodes Inc.)	TRANS 2NPN PREBIAS 0.15W SOT563	297524000
DMA5610F0R Panasonic	TRANS PREBIAS DUAL PNP SMINI5	1920
MUN5235DW1T1	TRANS 2NPN PREBIAS 0.25W SOT363	567000
NSBA144EDXV6T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 2PNP 50V SOT563	108000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications