Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
RN4904FE,LF(CT

RN4904FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

0

UMH2NTN

UMH2NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

3183

DCX122LH-7

DCX122LH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

EMD22T2R

EMD22T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

0

PBLS2001S,115

PBLS2001S,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

3990

DDC143TU-7-F

DDC143TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

0

PIMD3,115

PIMD3,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSOP

74743

RN4984,LF(CT

RN4984,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

0

NSBC143TPDXV6T1G

NSBC143TPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

628448000

EMH10FHAT2R

EMH10FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

8852

PEMD3,115

PEMD3,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

1751

NSBC143ZPDXV6T5G

NSBC143ZPDXV6T5G

SMALL SIGNAL BIPOLAR TRANSISTOR

76000

DCX143TH-7

DCX143TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

DMG964H50R

DMG964H50R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

16000

DCX143EU-7-F

DCX143EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

29142

PEMD30,115

PEMD30,115

Nexperia

NOW NEXPERIA PEMD30 - SMALL SIGN

21320

DDA123JK-7-F

DDA123JK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT26

0

EMF5XV6T5

EMF5XV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

1048000

UMB4NTN

UMB4NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

0

EMB3T2R

EMB3T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

14604

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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