Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
IMD9AT108

IMD9AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

1150

DDC113TU-7-F

DDC113TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

3039

BCR148SH6433XTMA1

BCR148SH6433XTMA1

IR (Infineon Technologies)

TRANS 2NPN PREBIAS 0.25W SOT363

0

NSVBC143ZPDXV6T5G

NSVBC143ZPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

96000

MUN5216DW1T1

MUN5216DW1T1

TRANS 2NPN PREBIAS 0.25W SOT363

24000

PUMH7,115

PUMH7,115

Nexperia

TRANS 2NPN PREBIAS 0.3W 6TSSOP

4069

DMA264010R

DMA264010R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

932

DDC142JH-7

DDC142JH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

RN1702JE(TE85L,F)

RN1702JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.1W ESV

7302

DMA261090R

DMA261090R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1175

NSBC114YDXV6T1

NSBC114YDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

23960

PBLS6005D,115

PBLS6005D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

0

PEMB11,115

PEMB11,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

3930

RN4905FE,LF(CT

RN4905FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

6326

XP0331200L

XP0331200L

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

5203

SMUN5216DW1T1G

SMUN5216DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

215015000

PBLS6021D,115

PBLS6021D,115

Nexperia

NOW NEXPERIA PBLS6021D - SMALL S

162000

DDA142JU-7-F

DDA142JU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

0

RN2707JE(TE85L,F)

RN2707JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ESV

2845

NSBC124EPDXV6T1G

NSBC124EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

374484000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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