Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
BCR48PNH6433XTMA1

BCR48PNH6433XTMA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

66666

NP0J1A300A

NP0J1A300A

Panasonic

TRANS PREBIAS DUAL PNP SSSMINI6

9860

PEMD24,115

PEMD24,115

Nexperia

NOW NEXPERIA PEMD24 SMALL SIGNAL

184900

UMG4NTR

UMG4NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

2975

UMA3NTR

UMA3NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

454

BCR08PNH6433XTMA1

BCR08PNH6433XTMA1

IR (Infineon Technologies)

TRANS NPN/PNP PREBIAS SOT363

0

DMA964010R

DMA964010R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

15305

NSBC124EPDXV6T1

NSBC124EPDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

211695

DMG963HE0R

DMG963HE0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

16000

BCR198SH6327XTSA1

BCR198SH6327XTSA1

IR (Infineon Technologies)

TRANS 2PNP PREBIAS 0.25W SOT363

0

DMG964040R

DMG964040R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

4331

DCX122LU-7-F

DCX122LU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

0

XP0111300L

XP0111300L

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

1223

PUMD12,115

PUMD12,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

20801

FMG9AT148

FMG9AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

2240

NSVMUN5233DW1T3G

NSVMUN5233DW1T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V DUAL BIPO SC88-6

0

MUN5311DW1T1

MUN5311DW1T1

TRANS PREBIAS NPN/PNP SOT363

18000

DMA5610M0R

DMA5610M0R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

5980

PIMH9,115

PIMH9,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSOP

80

MUN5332DW1T1G

MUN5332DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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