Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
BCR48PNH6327XTSA1

BCR48PNH6327XTSA1

IR (Infineon Technologies)

TRANS NPN/PNP PREBIAS SOT363

0

IMH4AT110

IMH4AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

0

PRMD13Z

PRMD13Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

6880

MUN5133DW1T1G

MUN5133DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

1083427000

NSVUMC5NT2G

NSVUMC5NT2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SC88A

2832

DDC114EU-7-F

DDC114EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

0

EMG9T2R

EMG9T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

536

PBLS4002Y,115

PBLS4002Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

3580

DDA123JH-7

DDA123JH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

EMF21-7

EMF21-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN PREBIAS/PNP SOT563

0

RN2705JE(TE85L,F)

RN2705JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ESV

695

PQMH11Z

PQMH11Z

Nexperia

TRANS PREBIAS 2NPN 50V 6DFN

2580

MUN5115DW1T1G

MUN5115DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

8840

EMA11T2R

EMA11T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

0

NSBA143EDP6T5G

NSBA143EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

0

PUMD10,115

PUMD10,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

14764

IMH21T110

IMH21T110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

2

NSBA143EDXV6T1G

NSBA143EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

RN1905(T5L,F,T)

RN1905(T5L,F,T)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.2W US6

781

UMB3NTN

UMB3NTN

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT6

880

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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