Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
RN2964(TE85L,F)

RN2964(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W US6

2855

RN1711,LF

RN1711,LF

Toshiba Electronic Devices and Storage Corporation

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

6000

PRMB11Z

PRMB11Z

Nexperia

TRANS PREBIAS 2PNP 50V DFN1412-6

4150

PRMD2Z

PRMD2Z

Nexperia

PRMD2/SOT1268/DFN1412-6

4750

DMA961010R

DMA961010R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

6197

DMG264H00R

DMG264H00R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

2830

EMG6T2R

EMG6T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

3691

RN1703JE(TE85L,F)

RN1703JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.1W ESV

4010

DMA566050R

DMA566050R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

3000

EMB2T2R

EMB2T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

8435

EMD5DXV6T5G

EMD5DXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

0

EMD9T2R

EMD9T2R

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

53

DCX123JK-7-F

DCX123JK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS 0.3W SC74R

0

EMG4T2R

EMG4T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

0

EMH2T2R

EMH2T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

29372

NSBC124XPDXV6T1

NSBC124XPDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

8000

DMG9640T0R

DMG9640T0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7985

NSBC144EDXV6T5G

NSBC144EDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

104000

ACX114YUQ-7R

ACX114YUQ-7R

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363

0

ACX114EUQ-13R

ACX114EUQ-13R

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 10

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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