Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZD27C33P

BZD27C33P

Rectron USA

DIODE ZENER 33V 800MW SOD-123F

0

BZV55C 30BSD

BZV55C 30BSD

Rectron USA

DIODE ZENER 30V 500MW LL-34

0

BZX584C3V6

BZX584C3V6

Rectron USA

DIODE ZENER 3.6V 200MW SOD-523

0

M3Z15VB

M3Z15VB

Rectron USA

DIODE ZENER 15V 200MW SOD-323F

0

BZX85C22-T-M

BZX85C22-T-M

Rectron USA

DIODE ZENER 22V 1.3W DO-41

0

BZX884C6V8

BZX884C6V8

Rectron USA

DIODE ZENER 6.8V 250MW DN1006

0

MMBZ5223BW

MMBZ5223BW

Rectron USA

DIODE ZENER 2.7V 200MW SOT-323

0

Z110

Z110

Rectron USA

DIODE ZENER 110V 1W DO-41

0

BZX84C3V6W

BZX84C3V6W

Rectron USA

DIODE ZENER 3.6V 200MW SOT-323

0

BZM55B3V9

BZM55B3V9

Rectron USA

ZENER 3.9V 500MW MICRO-MELF

0

BZX884C18

BZX884C18

Rectron USA

DIODE ZENER 18V 250MW DN1006

0

BZV55C 36BSD

BZV55C 36BSD

Rectron USA

DIODE ZENER 36V 500MW LL-34

0

BZX984C51

BZX984C51

Rectron USA

DIODE ZENER 51V 150MW SOD-923

0

BZM55C5.6BSC

BZM55C5.6BSC

Rectron USA

DIODE ZENER 5.6V 500MW LS-31

0

SMA5947A

SMA5947A

Rectron USA

DIODE ZENER 82V 1W SMA

0

SMB5358B

SMB5358B

Rectron USA

DIODE ZENER 22V 5W SMB

0

MMSZ4678

MMSZ4678

Rectron USA

DIODE ZENER 1.8V 500MW SOD-123

0

BZT52C16S

BZT52C16S

Rectron USA

DIODE ZENER 16V 200MW SOD-323

0

BZX584C24

BZX584C24

Rectron USA

DIODE ZENER 24V 200MW SOD-523

0

BZM55B9V1

BZM55B9V1

Rectron USA

ZENER 9.1V 500MW MICRO-MELF

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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