Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZX84B2V7

BZX84B2V7

Rectron USA

DIODE ZENER 2.7V 350MW SOT-23

0

SMF4753AV

SMF4753AV

Rectron USA

DIODE ZENER 36V 1W SOD-123FL

0

BZM55C6.8BSA

BZM55C6.8BSA

Rectron USA

DIODE ZENER 6.8V 500MW LS-31

0

ZMM5229B

ZMM5229B

Rectron USA

DIO ZENER GLASS 4.3V 500MW LL-34

0

1SMB5935B

1SMB5935B

Rectron USA

DIODE ZENER 27V 3W SMB

0

BZV55C 33BSC

BZV55C 33BSC

Rectron USA

DIODE ZENER 33V 500MW LL-34

0

MM5Z39B

MM5Z39B

Rectron USA

DIODE ZENER 39V 500MW SOD-523

0

BZM55C7.5BSB

BZM55C7.5BSB

Rectron USA

DIODE ZENER 7.5V 500MW LS-31

0

1SMAF2EZ33

1SMAF2EZ33

Rectron USA

DIODE ZENER 33V 2W SMAF

0

SMB5376B

SMB5376B

Rectron USA

DIODE ZENER 87V 5W SMB

0

MMSZ4702T

MMSZ4702T

Rectron USA

DIODE ZENER 15V 300MW SOD-523

0

1SMAF4737A

1SMAF4737A

Rectron USA

DIODE ZENER 7.5V 1W SMAF

0

MMSZ4704

MMSZ4704

Rectron USA

DIODE ZENER 17V 500MW SOD-123

0

1SMB5944B

1SMB5944B

Rectron USA

DIODE ZENER 62V 3W SMB

0

SMF4737AV

SMF4737AV

Rectron USA

DIODE ZENER 7.5V 1W SOD-123FL

0

BZV55C 10BS

BZV55C 10BS

Rectron USA

DIODE ZENER 10V 500MW LL-34

0

DL4733A

DL4733A

Rectron USA

DIODE ZENER 5.1V 1W LL-41

0

SMA3Z30A

SMA3Z30A

Rectron USA

DIODE ZENER 30V 3W SMA

0

SMA5923A

SMA5923A

Rectron USA

DIODE ZENER 8.2V 1W SMA

0

SMB5340B

SMB5340B

Rectron USA

DIODE ZENER 6V 5W SMB

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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