Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZM55C8.2BSB

BZM55C8.2BSB

Rectron USA

DIODE ZENER 8.2V 500MW LS-31

0

ZMM5225B

ZMM5225B

Rectron USA

DIO ZENER GLASS 3V 500MW LL-34

0

1SMA5944B

1SMA5944B

Rectron USA

DIODE ZENER 62V 1.5W SMA

0

BZX84B36

BZX84B36

Rectron USA

DIODE ZENER 36V 350MW SOT-23

0

MMSZ5245BS

MMSZ5245BS

Rectron USA

DIODE ZENER 15V 500MW SOD-323

0

BZX584C8V2

BZX584C8V2

Rectron USA

DIODE ZENER 8.2V 200MW SOD-523

0

1SMA5932B

1SMA5932B

Rectron USA

DIODE ZENER 20V 1.5W SMA

0

SMB5367B

SMB5367B

Rectron USA

DIODE ZENER 43V 5W SMB

0

SMA3Z75A

SMA3Z75A

Rectron USA

DIODE ZENER 75V 3W SMA

0

SMB5339B

SMB5339B

Rectron USA

DIODE ZENER 5.6V 5W SMB

0

MMSZ4707T

MMSZ4707T

Rectron USA

DIODE ZENER 20V 300MW SOD-523

0

SMB5377B

SMB5377B

Rectron USA

DIODE ZENER 91V 5W SMB

0

BZX84C18W

BZX84C18W

Rectron USA

DIODE ZENER 18V 200MW SOT-323

0

FM4740W

FM4740W

Rectron USA

DIODE ZENER GLASS 10V 1W SMA

0

BZT52C75S

BZT52C75S

Rectron USA

DIODE ZENER 75V 200MW SOD-323

0

1SMAF4755A

1SMAF4755A

Rectron USA

DIODE ZENER 43V 1W SMAF

0

ZMM5239B

ZMM5239B

Rectron USA

DIO ZENER GLASS 9.1V 500MW LL-34

0

DL4728A

DL4728A

Rectron USA

DIODE ZENER 3.3V 1W MELF

0

BZX84C68

BZX84C68

Rectron USA

DIODE ZENER 68V 350MW SOT-23

0

MMSZ5221B

MMSZ5221B

Rectron USA

DIODE ZENER 2.4V 500MW SOD-123

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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