Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
1SMA5942B

1SMA5942B

Rectron USA

DIODE ZENER 51V 1.5W SMA

0

BZV55C 6.2BS

BZV55C 6.2BS

Rectron USA

DIODE ZENER 6.2V 500MW LL-34

0

SMB5383B

SMB5383B

Rectron USA

DIODE ZENER 150V 5W SMB

0

1SMAF4741A

1SMAF4741A

Rectron USA

DIODE ZENER 11V 1W SMAF

0

DL4753A

DL4753A

Rectron USA

DIODE ZENER 36V 1W LL-41

0

MMSZ5256BS

MMSZ5256BS

Rectron USA

DIODE ZENER 30V 500MW SOD-323

0

BZX84C24W

BZX84C24W

Rectron USA

DIODE ZENER 24V 200MW SOT-323

0

SMA5939A

SMA5939A

Rectron USA

DIODE ZENER 39V 1W SMA

0

SMA5927A

SMA5927A

Rectron USA

DIODE ZENER 12V 1W SMA

0

SMF4743AV

SMF4743AV

Rectron USA

DIODE ZENER 13V 1W SOD-123FL

0

SMA5943A

SMA5943A

Rectron USA

DIODE ZENER 56V 1W SMA

0

MMSZ4689T

MMSZ4689T

Rectron USA

DIODE ZENER 5.1V 300MW SOD-523

0

1SMA5951B

1SMA5951B

Rectron USA

DIODE ZENER 120V 1.5W SMA

0

1SMB5952B

1SMB5952B

Rectron USA

DIODE ZENER 130V 3W SMB

0

Z120A

Z120A

Rectron USA

DIODE ZENER 120V 1W DO-41

0

BZD27C43P

BZD27C43P

Rectron USA

DIODE ZENER 43V 800MW SOD-123F

0

SMA3Z22A

SMA3Z22A

Rectron USA

DIODE ZENER 22V 3W SMA

0

BZT52B5V1S

BZT52B5V1S

Rectron USA

DIODE ZENER 5.1V 500MW SOD-323

0

DL4743A

DL4743A

Rectron USA

DIODE ZENER 13V 1W LL-41

0

SMB5382B

SMB5382B

Rectron USA

DIODE ZENER 140V 5W SMB

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

RFQ BOM Call Skype Email
Top